sbct1020 ... sbct10100 sbct1020 ... sbct10100 schottky barrier rectifier diodes C common cathode schottky-barrier-gleichrichterdioden C gemeinsame kathode version 2013-05-07 dimensions - ma?e [mm] nominal current nennstrom 10 a repetitive peak reverse voltage periodische spitzensperrspannung 20...100 v plastic case kunststoffgeh?use to-220ab weight approx. gewicht ca. 2.2g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging in tubes standard lieferform in stangen maximum ratings grenzwerte type typ repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] surge peak reverse voltage sto?spitzensperrspannung v rsm [v] forward voltage durchlass-spannung v f [v] 1 ) 2 ) i f = 5 a i f = 10 a sbct1020 20 20 < 0.55 < 0.63 sbct1030 30 30 < 0.55 < 0.63 sbct1040 40 40 < 0.55 < 0.63 sbct1045 45 45 < 0.55 < 0.63 sbct1050 50 50 < 0.70 < 0.79 SBCT1060 60 60 < 0.70 < 0.79 sbct1090 90 90 < 0.85 < 0.92 sbct10100 100 100 < 0.85 < 0.92 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t c = 100c i fav i fav 5 a 1 ) 10 a 2 ) repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 20 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 100/120 a 2 ) rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 50 a 2 s 2 ) junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+175c 1 t j = 25c 1 p er diode ? pro diode 2 per device (parallel operation) ? pro bauteil (parallelbetrieb) ? diotec semiconductor ag http://www.diotec.com/ 1 4 3 2 1 4 3 1 type typ 2.54 0.1 0.8 0.2 1.3 0.1 10.1 0.3 3 . 9 0 . 3 2 . 8 0 . 3 1 3 . 9 0 . 3 1 4 . 9 0 . 7 ? 0.2 3.8 1.2 0.2 0.42 0.1 4.5 0.2 2.67 0.2 8 . 7 0 . 3 2
sbct1020 ... sbct10100 characteristics kennwerte leakage current sperrstrom t j = 25c t j = 100c v r = v rrm i r < 300 a 1 ) < 7 ma 1 ) thermal resistance junction to case w?rmewiderstand sperrschicht - geh?use r thc 3.0 k/w 2 ) 1 p er diode ? pro diode 2 per device (parallel operation) ? pro bauteil (parallelbetrieb) 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current vs. temp. of the case in abh. v. d. geh?usetemperatur zul. richtstrom 120 100 80 60 40 20 0 i fav [%] [c] t c 150 100 50 0 sbct1020...sbct1045 sbct1050, SBCT1060 sbct1080, sbct10100 forward characteristics (typical values) durchlasskennlinien (typische werte) 10 10 1 10 10 2 -1 -2 [a] i f 0 v f 0.4 0.6 [v] 1.0 t = 25c j
|
